HEAT FLOW RESISTANCE EVALUATION IN AVALANCHE DIODES.SELLBERG F.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 763-765; BIBL. 6 REF.Article

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NOISE MEASUREMENTS ON PHOTO AVALANCHE DIODESGONG J; VAN VLIET KM; SUTHERLAND AD et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 63; NO 2; PP. 445-460; ABS. GER; BIBL. 16 REF.Article

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METHODE DE DETERMINATION, SANS ETALON, DES PARAMETRES DU SCHEMA EQUIVALENT DU BOITIER D'UNE DIODE DE TRANSIT A AVALANCHEKUZNETSOV OV.1978; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1978; VOL. 21; NO 9; PP. 106-108; BIBL. 6 REF.Article

ANALYSE DU MECANISME DE SENSIBILITE FREQUENTIELLE DE MODULATION D'UN GENERATEUR A DIODE DE TRANSIT A AVALANCHEBUGAEV AV.1982; RADIOTEH. ELEKTRON.; ISSN 508322; SUN; DA. 1982; VOL. 27; NO 6; PP. 1186-1188; BIBL. 8 REF.Article

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AVALANCHE BREAKDOWN AS A NONLINEAR WAVE.AGU M; KINOSHITA T.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 5; PP. 835-839; BIBL. 6 REF.Article

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TRANSFORMATION DES STRUCTURES MESAS PLANES EN MESAS TOTALES POUR APPLICATION AUX DIODES AVALANCHE MILLIMETRIQUES ET AUX DIODES POUR MODULATION RAPIDEBOUVET JV; SIMON J.1978; ; FRA; DA. 1978; DGRST-76 70 698; 2 FASC., 12, 23 P.: ILL.; 30 CM; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

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